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Electron Backscatter Diffraction (EBSD)

Electron Backscatter Diffraction (EBSD) is a technique that is uniquely suited to characterize crystallographic properties of your samples. Proprieties such as: grain size, grain orientation, misorientation, deformation, texture and grain aspect ratio can all be characterized by this technique.

EBSD Analysis is a great complement to the excellent capabilities of our X-ray diffraction (XRD) services. While our XRD tools and staff can provide unparalleled information on phase ID, nanocrystalline grain size, thin film thickness and textures; the new capabilities available by EBSD will provide a more complete description of your crystalline samples.

Ideal Uses
  • Characterization of annealing processes
  • Characterization of texture in localized areas such as near welds or on semiconductor bond pads.
  • Characterization of grain size and texture as it related to finish quality in sheet steel and Al.
  • Measurement of large grains, without the error associated with LM.
  • Characterization of special grain boundaries, such as CSL’s and twins
  • Measurement of grain misorientation
  • Characterization of deformation by examination of intragrain misorientation and grain aspect ratio.
  • Characterization of epitaxially grown thin films.
  • Characterization of in-depth texture, by examining cross sections.
Technical Specifications

Signal Detected: Diffracted electrons
Elements Detected: All elements, assuming they are present in a crystalline matrix
Detection Limits: Grain size >80nm
Quantitative analysis: Grain size and related measurements: ~10%

Strengths
  • Direct measurement of Grain size.
  • Able to uniquely characterize individual grain boundary angles
  • Can map phase distribution of some materials.
  • Can map grains sizes from 10’s of nm to 100’s of um.
Limitations
  • Cannot measure amorphous materials.
  • Moderate ability to differentiate different phases.