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Electron Backscatter Diffraction (EBSD)

Electron Backscatter Diffraction (EBSD) is a technique that is uniquely suited to characterize crystallographic properties of your samples. Proprieties such as: grain size, grain orientation, misorientation, deformation, texture and grain aspect ratio can all be characterized by this technique.

EBSD Analysis is a great complement to the excellent capabilities of our XRD services. While our XRD tools and staff can provide unparalleled information on phase ID, nanocrystalline grain size, thin film thickness and textures; the new capabilities available by EBSD will provide a more complete description of your crystalline samples.

Ideal Uses
  • Characterization of annealing processes
  • Characterization of texture in localized areas such as near welds or on semiconductor bond pads.
  • Characterization of grain size and texture as it related to finish quality in sheet steel and Al.
  • Measurement of large grains, without the error associated with LM.
  • Characterization of special grain boundaries, such as CSL’s and twins
  • Measurement of grain misorientation
  • Characterization of deformation by examination of intragrain misorientation and grain aspect ratio.
  • Characterization of epitaxially grown thin films.
  • Characterization of in-depth texture, by examining cross sections.
Technical Specifications

Signal Detected: Diffracted electrons
Elements Detected: All elements, assuming they are present in a crystalline matrix
Detection Limits: Grain size >80nm
Quantitative analysis: Grain size and related measurements: ~10%

Strengths
  • Direct measurement of Grain size.
  • Able to uniquely characterize individual grain boundary angles
  • Can map phase distribution of some materials.
  • Can map grains sizes from 10’s of nm to 100’s of um.
Limitations
  • Cannot measure amorphous materials.
  • Moderate ability to differentiate different phases.