Transmission Electron Microscopy (TEM) and Scanning Transmission Electron Microscopy (STEM)
Transmission Electron Microscopy (TEM) and Scanning Transmission Electron Microscopy (STEM) are similar techniques that image a sample using an electron beam. Image resolutions that are around 1-2Å are provided by high energy electrons, which are incident on ultra-thin samples. TEM and STEM have better spatial resolution than SEM and can execute additional analytical measurements, but they require much more sample preparation.
Though TEM and STEM are more time intensive than many other frequently used analytical tools, the wealth of information accessible from those techniques is impressive. Not only can we obtain exceptional image resolution, it is additionally possible to characterize crystallographic phase, crystallographic orientation (using diffraction mode experiments), generate elemental maps (by using EDS or EELS), and acquire images highlighting elemental contrast (dark field mode). These can all be accomplished from precisely located nm sized areas. STEM and TEM are perfect failure analysis tools for thin film and IC samples.
Please click here to learn about EAG's EMview software for SEM, FIB, TEM, and STEM data processing and display.
Request More Information on EAG's TEM/STEM Analysis Services
- Identification of nm sized defects on integrated circuits, including embedded particles and residues at the bottom of vias.
- Determination of crystallographic phases as a function of distance from an interface.
- Nanoparticle characterization: Core/shell investigations, agglomeration, effects of annealing...
- Catalyst support coverage.
- Ultra small area elemental maps.
- III-V super lattice characterization
- Crystal defect characterization
Signal Detected: Transmitted electrons, scattered electrons, secondary electrons, x-rays
Elements Detected: B-U (EDS)
Detection Limits: 0.1-1at%
Imaging/Mapping: Yes (EDS, EELS)
Ultimate Lateral Resolution: <0.2nm
- The ultimate elemental mapping resolution of any analytical technique.
- Sub 0.2nm (2Å) image resolution.
- Small area crystallographic information
- Significant sample preparation time
- Samples are often prepared that are <100nm
- Some materials not stable to electron beam
- Compound Semiconductors
- Intergrated circuit
- Magnetic media
Related Application Notes
- Two-dimensional Mapping of Matrix Elements in a Microelectronic Device by Scanning Transmission Electron Microscopy-Electron Energy Loss Spectroscopy (STEM-EELS) AN464
- Rapid Defect Typing in GaN Using a Dedicated Scanning Transmission Electron Microscope (STEM) AN463
- Imaging of Nanoparticles by TEM AN462
- Z-Contrast Imaging and Elemental Analysis of Ultra-thin Films utilizing Scanning Transmission Electron Microscopy (STEM) with Energy Dispersive X-ray Spectroscopy (EDS) AN461
- CdTe Thin Film PV - Application Discussion BR047
- CIGS Thin Film PV - Application Discussion BR045
- Accurate Thin Film Measurements by High-Resolution Transmission Electron Microscopy (HRTEM) AN451
- Electron Energy Loss Spectroscopy (EELS) Characterization of an UItrathin Multilayer Film AN450
- Quantification of Ultrathin Layers by STEM-EDS AN472
- Charles Evans & Associates Model for Contamination Detection BR088
- Battery Technology Brochure BR057
- EAGLABS Aberration Corrected Scanning Transmission Electron Microscopy (AC-STEM) Services TN114
- Glass Analysis Brochure
- EAGLABS Bubble Chart: Analytical Resolution versus Detection Limit BR004
- Materials Characterization Brochure
- PV Materials Characterization for CIGS BR053
- PV Silicon Impurity Analysis BR025
- LED Brochure BR061
- Electron Microscopy Services BR018
- PV Materials Characterization for CdTe BR054
- Typical Applications for Techniques / Periodic Table of Elements BR038
- Amorphous & MicrocrystallineThin Film PV - Application Discussion BR046
- III-V Multi-Junction PV - Application Discussion BR048
- Silicon Wafer PV - Application Discussion BR044
- EAGLABS Transmission Electron Microscopy (TEM) and Scanning Transmission Electron Microscopy (STEM) Services TN110
- Your Solution for PV Materials Characterization BR032
- Compound Semiconductors for Optoelectronics - SIMS Analytical Services BR010
- Contamination Analysis for Compound Semiconductors - Analytical Services BR006
- EAG Services Introduction BR011
- EAG Technique Chart BR008