Secondary Ion Mass Spectrometry, SIMS Analysis

Secondary Ion Mass Spectrometry (SIMS) detects very low concentrations of dopants and impurities. It can provide elemental depth profiles over a depth range from a few angstroms (Å) to tens of microns (µm). The sample of interest is sputtered/etched with a beam of primary ions (usually O or Cs). Secondary ions formed Secondary Ion Mass Spectrometry (SIMS) analytical technique from Evans Analytical Group (EAG).during the sputtering process are extracted and analyzed using a mass spectrometer (usually a quadrupole or magnetic sector). The secondary ions can range in concentration from matrix levels down to sub-ppm trace levels.

Evans Analytical Group® (EAG) is the industry standard for SIMS Analysis, Secondary Ion Mass Spectrometrycommercial SIMS analysis, offering the best detection limits along with accurate concentration and layer structure identification. EAG's depth and scope of experience and commitment to research and development in the SIMS field is unrivaled. EAG has the largest range of SIMS instruments worldwide (more than 40), staffed by exceptionally qualified scientists. EAG also has the world's largest reference material library of ion-implanted and bulk-doped standards for accurate SIMS quantification.

EAG's analysts are adept at understanding our client's needs and designing relevant analyses to most effectively address their concerns and interests. EAG frequently uses SIMS analysis to help customers across a vareity of industries with research and development, quality control, failure analysis, troubleshooting, and process monitoring. EAG provides personal service throughout the process, to allow a complete understanding 
of the test results.

SIMS Training Tutorials

EAG's SIMSview™: SIMS Data Processing Software



  • Dopant and impurity depth profiling
  • Composition and impurity measurements of thin films (metals, dielectrics, SiGe, III-V, and II-V materials)
  • Ultra-high depth resolution profiling of shallow implants and ultra thin films (ULE implants and gate oxides)
  • Bulk analyses, including B, C, O, and N in Si
  • High-precision matching of process tools, such as ion implanters

Signal Detected: Secondary Ions

Elements Detected: H-U including isotopes

Detection Limits: >1010-1016at/cm3

Depth Resolution: >5Å

Imaging/Mapping: Yes

Lateral Resolution/Probe Size: >=10µm (depth profiling); 1µm (imaging mode)

  • Excellent detection sensitivity for dopants and impurities, with ppm or lower detection sensitivity
  • Depth profiles with excellent detection limits and depth resolution
  • Small-area analysis (10µm or larger)
  • Detection of all elements and isotopes, including H
  • Excellent dynamic range (up to 6 orders of magnitude)
  • Stoichiometry/composition possible, in some applications
  • Destructive
  • No chemical bonding information
  • Element specific
  • Sample must be solid and vacuum compatible
  • Semiconductors
  • Aerospace
  • Automotive
  • Compound Semiconductor
  • Data Storage
  • Defense
  • Displays
  • Electronics
  • Lighting
  • Photonics
  • Photovoltaics/Solar
  • Telecommunications

Related Application Notes

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