Industries
Services
Techniques
About

How do you constantly innovate while driving down costs?

SIMS Detection Limits of Selected Elements in SiC Under Normal Depth Profiling Conditions

APPLICATION NOTE

DISCUSSION

SIMS is a powerful analytical technique which allows detection of all elements from H to U with excellent sensitivity. The table provides a list of typical detection limits for impurities in a SiC matrix. These detection levels are for normal depth profiling conditions of blanket wafers.

SIMS is a powerful analytical technique which allows detection of all elements from H to U with excellent sensitivity. The table provides a list of typical detection limits for impurities in a SiC matrix. These detection levels are for normal depth profiling conditions of blanket wafers.

* can be achieved with raster change technique