EAG to Present at the CS International Conference: Optimization of III-V R&D and Manufacturing Using Advanced Analytical Methods
Evans Analytical Group will be presenting at the CS International Conference, to be held March 11-12, 2015 in Frankfurt, Germany.
Optimisation of III-V R&D and Manufacturing Using Advanced Analytical Methods
Temel Buyuklimanli, VP of Commercial Operations and Technical Services
As the largest independent materials characterization organization, EAG is able to utilize an assortment of techniques to evaluate compound semiconductors. Secondary Ion Mass Spectrometry (SIMS) and Transmission Election Microscopy (TEM) are examples of two analytical techniques with capabilities to broadly characterize impurities, defects and compositions of semiconductor materials from unprocessed epi wafer to finished device. Newly developed methods for these techniques have improved capabilities to detect 1-2nm layers with <2% repeatability for dopant, impurity and alloy composition measurements, complemented with atomic resolution crystallinity details. The deeply detailed information derived from these techniques can and is used for all facets of many III-V processes: research, development, technology transfer and production of microwave, photonics and power devices. This presentation will explore the fundamentals of both techniques and specific examples/applications of EAG’s vast experience with arsenide, phosphide and nitride based systems with emphasis given to GaN HEMT structures.
Analysis of thin layers close to the surface for impurity and alloy concentrations are especially challenging for GaN HEMT devices. However, newly developed methods allow us to do these measurements, which are critical for device design and performance. With proper methods detecting Si, C and O impurity concentrations at E15atoms/cc levels within the top 10’s of nm is achievable, when investigating a GaN HEMT epi film.