EAG to Present at MRS Spring: Reliability and Materials Issues of Semiconductor Optical and Electron Devices and Materials
Monday, April 6, 2015 9 a.m.-5 p.m. Moscone West, Level 3, Room 3009 Instructors: Leonard Brillson, The Ohio State University, Matteo Meneghini, University of Padova, Joachim Würfl, Ferdinand-Braun-Institut, Leibniz Institut fuer Hoechstfrequenztechnik, and Michael Salmon, Evans Analytical Group
Failure Analysis of Optical Devices
This tutorial by Dr. Salmon will first outline the general failure analysis techniques for optical devices that are readily available to engineers in an industrial lab setting. The fundamentals of each technique will be presented along with the types of information each can provide. Once the techniques have been reviewed, methodologies for their successful application in an effort to determine the underlying root cause of specific failures will be addressed through several case studies. The main focus of these examples will be heavily rooted in advanced sample preparation techniques primarily utilizing Focused Ion Beam (FIB), with analysis by Scanning Electron Microscopy (SEM) and Scanning Transmission Electron Microscopy (STEM). Additionally, examples of defect localization and characterization using Electron Beam Induced Current (EBIC) and SEM Cathodoluminescence (SEM-CL) will be presented.
Program: Symposium CC—Reliability and Materials Issues of Semiconductors─Optical and Electron Devices and Materials CC6: Characterization I Chair: Kenji Shiojima Chair: Tamotsu Hashizume Wednesday AM, April 8, 2015 11:00 AM – *CC6.03 Moscone West, Level 2, Room 2016
Failure Analysis Techniques in Optoelectronics
As solid-state optoelectronics device manufacturing has continued to mature, so too have the characterization techniques and methods necessary for understanding the increasingly subtle defects responsible for device performance and reliability issues. Advances in scanning microscopies such as Focused Ion Beam (FIB), Scanning Electron Microscopy (SEM), and Scanning Transmission Electron Microscopy have allowed for identification and inspection of these smaller and more subtle defects. Although we have the tools that can resolve atomic scale defects, the main issue becomes how to find the defects in a reasonable amount of time and effort. Fortunately, we can progressively hone in on specific defect location by using a combination of lower spatial resolution, ~1um – 0.25um, techniques such as Electroluminescence (EL), Emission Microscopy (EMMI), Electron Beam Induced Current (EBIC), and Cathodoluminescence (CL) with higher resolution techniques such as FIB, SEM, and STEM through the use of imaging software overlays. In this review I will provide a variety of examples showing how this methodology of using complimentary techniques works to locate and identify highly localized defects.