高分辨率XRD I –外延膜成分

This application note discusses how to determine the composition of epitaxial thin films by X-ray diffraction and will focus on the analysis of AlxGa1-xAs thin films.本应用笔记讨论了如何通过X射线衍射确定外延薄膜的成分,并将重点分析AlxGa1920-xAs薄膜。 Since the discovery of X-ray Crystallography in the 1s, it has been possible to indirectly measure the sizes of atoms.自从1年代发现X射线晶体学以来,就有可能间接测量原子的大小。 Researchers discovered that atomic radius varies from element to element.研究人员发现原子半径随元素的不同而变化。 This means that when an atom of one element is substituted for a different element in an epitaxial (single-crystal) thin film, there will be a change in lattice parameter.这意味着,在外延(单晶)薄膜中,用一种元素的原子代替另一种元素时,晶格参数会发生变化。 Figure XNUMX shows this effect for a series of epitaxial AlxGaXNUMX-xAs thin films on GaAs substrates.图XNUMX显示了GaAs衬底上一系列外延AlxGaXNUMX-xAs薄膜的这种效应。 As the aluminum content in the thin film decreases, the lattice parameter of the layer peak on the left due to the film moves toward the location of the GaAs substrate peak on the right.随着薄膜中铝含量的减少,由于薄膜而导致的左侧层峰的晶格参数向右侧的GaAs衬底峰位置移动。 In principle, this change in lattice parameter can be used to determine the composition of an epitaxial thin film as long as the replacement atoms are substitutional.原则上,只要替换原子是可取代的,则晶格参数的这种变化可用于确定外延薄膜的组成。 That is, the replacement atoms must replace other atoms in the actual crystal structure.即,替换原子必须替换实际晶体结构中的其他原子。 Interstitial atoms do not significantly change a crystal's lattice parameters.间隙原子不会显着改变晶体的晶格参数。

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