Depth profile characterization of low-k materials assists in the continually shrinking dimensions of integrated circuits. These shrinking geometries bring new challenges for materials characterization.
The use of Cu instead of Al for interconnects in silicon devices and the use of low-K dielectric materials to replace SiO2 have led to significant advances in IC speed and performance, but also to complications with materials processing and integration.
SIMS is one of the most valuable techniques for characterizing insulating, semiconductor, and metallic materials and can help solve process and integration problems. However, low-K dielectric materials introduce new issues for SIMS depth profiling. The unique insulating properties, chemical structure and often porous nature of the H or C-rich low-K materials make SIMS analysis very challenging since the analysis itself can degrade the material.
Low-K films are made in a wide spectrum of compositions and there is usually no standard sample available for SIMS data quantification. At EAG Laboratories, we have solved these issues.
Figure 1 shows a SIMS profile of a porous organosilicate low-K film. From this measurement we can get the atomic percent of H, C, O, and Si as a function of depth. Periodic peaks and dips in the profile show interfaces in this multi-layer structure.
EAG can provide depth profile characterization services, including:
Contact us today for your Characterization of Low-K Materials needs at +1 800-366-3867 or please complete the form below to have an EAG expert contact you.
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