Electron Backscatter Diffraction (EBSD)

Electron Backscatter Diffraction (EBSD) is a technique that is uniquely suited to characterize crystallographic properties of your samples. Proprieties such as: grain size, grain shape, grain orientation, grain boundary misorientation, spatial distribution of phases, local deformation, and texture can all be characterized by this technique.

EBSD Analysis is a great complement to the excellent capabilities of our X-ray diffraction (XRD) services. While our XRD tools and staff can provide unparalleled information on phase ID, nanocrystalline grain size, thin film thickness and textures; the new capabilities available by EBSD will provide spatial information and help to visualize the microstructure, add to a complete description of your crystalline samples.

Ideal Uses of EBSD

Visualization of microstructure with spatial coordinates
Characterization of texture in exact locations such as near welds or on semiconductor bond pads
Characterization of grain size and texture as it related to finish quality in sheet steel and Al
Measurement of large grains, without the error associated with LM
Characterization of special grain boundaries, such as CSL’s and twins
Measurement of grain misorientation
Characterization of deformation by examination of intragrain misorientation and grain aspect ratio
Characterization of epitaxially grown thin films
Characterization of in-depth texture, by examining cross sections

Strengths

Direct measurement of grain size
Able to uniquely characterize individual grain boundary angles
Can map phase distribution of some materials
Can map grains sizes from several 10s of nm to several 10s of mm

Limitations

Cannot measure amorphous materials.
Moderate ability to differentiate different phases

EBSD Technical Specifications

Signal Detected: Diffracted electrons
Elements Detected: All elements, assuming they are present in a crystalline matrix
Detection Limits: Grain size >80 nm
Quantitative analysis: Grain size and related measurements: ~10%