Electron Backscatter Diffraction (EBSD)
Electron Backscatter Diffraction (EBSD) is a technique that is uniquely suited to characterize crystallographic properties of your samples. Proprieties such as: grain size, grain shape, grain orientation, grain boundary misorientation, spatial distribution of phases, local deformation, and texture can all be characterized by this technique.
EBSD Analysis is a great complement to the excellent capabilities of our X-ray diffraction (XRD) services. While our XRD tools and staff can provide unparalleled information on phase ID, nanocrystalline grain size, thin film thickness and textures; the new capabilities available by EBSD will provide spatial information and help to visualize the microstructure, add to a complete description of your crystalline samples.
Ideal Uses of EBSD
- Visualization of microstructure with spatial coordinates
- Characterization of texture in exact locations such as near welds or on semiconductor bond pads
- Characterization of grain size and texture as it related to finish quality in sheet steel and Al
- Measurement of large grains, without the error associated with LM
- Characterization of special grain boundaries, such as CSL’s and twins
- Measurement of grain misorientation
- Characterization of deformation by examination of intragrain misorientation and grain aspect ratio
- Characterization of epitaxially grown thin films
- Characterization of in-depth texture, by examining cross sections
- Direct measurement of grain size
- Able to uniquely characterize individual grain boundary angles
- Can map phase distribution of some materials
- Can map grains sizes from several 10s of nm to several 10s of mm
- Cannot measure amorphous materials.
- Moderate ability to differentiate different phases
EBSD Technical Specifications
- Signal Detected: Diffracted electrons
- Elements Detected: All elements, assuming they are present in a crystalline matrix
- Detection Limits: Grain size >80 nm
- Quantitative analysis: Grain size and related measurements: ~10%