Advanced microscopy techniques such as SEM (Scanning Electron Microscopy), TEM (Transmission Electron Microscopy) and Dual Beam SEM are essential techniques to investigate sample microstructure, morphology, particle size, particle coatings and defects. These techniques often employ elemental mapping capabilities such as EELS (Electron Energy Loss Spectroscopy) and EDS (Energy Dispersive X-Ray Spectroscopy), which provide valuable information about elemental composition and location/distribution.
EAG offers a broad range and large installed base of different microscopy tools and services to match your application, ranging from process development to failure analysis. In addition to providing high resolution imaging, our analytical capability makes us a unique partner that can help you during research, development, and analysis of failures.
Microscopy techniques can be used to characterize many types of defects. These include:
The types of materials tested using advanced microscopy techniques:
There has been a rapid emergence of new technologies, which has enabled new industries such as facial recognition, autonomous driving, virtual reality, and 5G communication. These growth areas typically include FinFET, VCSEL, and III/V compound semiconductors. For our Advanced Microscopy team, the materials indicate hetero-epitaxy, cubic and hexagonal lattices, where failures in devices often have complicated 3D structures.
Recent development of FIB technology enables high-precision TEM sample preparation of 3D logic and memory devices. This example shows a HAADF image of a gate cut from a 22 nm generation 3D FinFET device with LGate~30 nm, as seen in a recent paper by the EAG Laboratories Advanced Microscopy team that was presented at Microscopy and Microanalysis 25 (S2): 690-691 (2019) “Industrial Applications of Electron Microscopy: A Shared Laboratory Perspective”
Another interesting example is the picture below that shows an aluminum nitride/silicon carbide interface observed using HR-STEM imaging.
In the example below, we observe GaN Dislocation Typing: Burgers Vector Analysis with Large-Angle Convergent-Beam Electron Diffraction (LACBED)
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