Total Reflection X-ray Fluorescence (TXRF) utilizes extremely low-angle X-ray excitation of a polished wafer surface to obtain the concentration of surface metallic contaminants.
The incident angle of the X-ray beam (typically 0.05-0.5°) is below the critical angle for the substrate and limits excitation to the outermost surface of the sample (~ top 80 Å, depending on the material). The fluorescence signal emitted from the sample is characteristic of the elemental contaminants present.
The surface sensitivity of TOF-SIMS makes it a good first pass at problem solving to give an overview of what types of species are present on a sample. Other techniques can then be used to obtain additional information. TOF-SIMS is also a technique that can detect species at significantly lower levels than traditional surface analysis techniques such as XPS and Auger.
A highly surface-sensitive technique, TXRF is optimized for analyzing surface metal contamination on semiconductor wafers such as Si, SiC, GaAs or sapphire.
Contact us today for your Total Reflection X-ray Fluorescence (TXRF) needs at +1 800-366-3867 or please complete the form below to have an EAG expert contact you.
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