Ultra-clean surfaces are critically important to successful processing of semiconductor devices. Device failure can often be attributed to surface contaminants such as transition metals and alkali atoms. In order to control contaminants, it is necessary to identify and quantify them.
As a survey technique, TXRF provides high sensitivity multi-element surface contamination measurements at low cost.
SURFACESIMS.XP provides (1) areal densities of surface contaminants and (2) information about the near surface depth distribution of contaminants. This represents an important advantage over TXRF, VPD-AAS, and VPD-ICPMS.
Correlation between SURFACESIMS and TXRF measurements of surface metal contamination on silicon, S. P. Smith, J. Metz and P. K. Chu, in Secondary Ion Mass Spectrometry (SIMS XI), edited by G. Gillen, R. Lareau, J. Bennett and F. Stevie.
(John Wiley & Sons, Chichester, 1998) pp. 233-236.
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