Trace Element Depth Profiles
SIMS has ppm to ppt detection limits for every element in the periodic table including H. A primary ion beam sputter etches the sample surface, both generating ions from the sample material that can be mass analyzed to determine the element.
Sputter etching forms a crater enabling sampling with depth. SIMS quantification depends on standards. The standard must have the elements of interest in the same matrix material. Quantification is generally valid from 1 at% to trace level.