Secondary ion mass spectrometry (SIMS analysis) is used to measure trace impurities in various materials such as semiconductor materials, metal materials, and insulating materials. Insulating materials such as glass are charged up during measurement, making an analysis of insulating materials much more difficult than conducting materials. EAG develops analysis technology for glass materials and provides distinctive services.
If the charge-up correction by electron beam irradiation is insufficient, elements such as sodium (Na) move into the sample due to the electric field induced by the surface charge (electric field-induced diffusion phenomenon), and an accurate depth distribution is obtained. I can’t get it. Figure 1 shows an example of Na concentration analysis in an insulating material (BPSG).
Fig. 1 shows an example of Na depth concentration analysis in insulating material (BPSG). The Red profile is a measurement condition with appropriate charge-up correction The Blue profile is a measurement condition with insufficient charge-up correction
The performance of chemically strengthened glass is greatly influenced by the concentration of alkali metal elements on the glass surface and the distribution in the depth direction. An analysis example is shown below.
The functional glass surface has a thin film multilayer structure. XPS analysis is generally used to analyze the depth direction of the surface thin film of functional glass. EAG has made it possible to perform depth direction analysis even in SIMS analysis. SIMS analysis has better detection sensitivity than XPS analysis, so it is possible to grasp the distribution of trace impurities that could not be detected by XPS analysis.
Contact us today for your Impurity depth direction analysis needs at +1 800-366-3867 or please complete the form below to have an EAG expert contact you.
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