SIMS Detection Limits of Selected Elements in Si and SiO2 Under Normal Depth Profiling Conditions

SIMS is a powerful analytical technique which allows detection of all elements from H to U with excellent sensitivity. The table provides a list of typical detection limits for impurities in Si and SiO2 matrices. These detection levels are for normal depth profiling conditions of blanket wafers. Detection levels for device samples depends on the size of the available analysis area.

SIMS-Detection-Limits-Si

Would you like to learn more about SIMS Detection Limits of Elements in Si and SiO2?

Contact us today for your SIMS detection limits of elements in Si and SiO2. Please complete the form below to have an EAG expert contact you.

To enable certain features and improve your experience with us, this site stores cookies on your computer. Please click Continue to provide your authorization and permanently remove this message.

To find out more, please see our privacy policy.