However, it should be noted that, for the present case the signals for O, N and Ti are noisier than if a separate EELS acquisition was optimized for just these three elements. This is a tradeoff between mapping elements spanning a large energy loss range and the exponential fall in EELS signal intensity with increasing energy loss.
In the present case a wide energy loss range was monitored to include signals from Si (L2,3 @ 99.2eV) to Ni (L2,3 @ 854eV) with the core loss edges of Ni, Ti and O occurring in between (@ 401.6eV, 455.5eV & 532eV respectively).