Reverse Engineering of Compound Semiconductors
When information is required from a finished and packaged device, EAG Laboratories can depackage and deprocess the sample and then fully characterize it using various analytical techniques. Information that can be obtained includes:
- sample structure
- surface passivation layer presence (and thickness)
- active region thickness
- composition of the various layers
- dopant type (P or N), concentration and depth distribution
- composition (mole fraction) in ternary layers such as AlGaN or InGaN etc
- contaminant type, level and depth distribution
This example shows a SIMS depth profile of a blue LED device. SIMS showed the structure to be of the type: AlGaN/{InGaN/GaN}×3/AlGaN/InGaN/GaN, as seen from the Al and In profiles. The dopant (Mg and Si) distribution and concentration were also successfully measured.
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