SIMS Detection Limits of Selected Elements in ZnO Under Normal Depth Profiling Conditions

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SIMS is a powerful analytical technique which allows detection of all elements in ZnO with excellent sensitivity. The table provides a list of typical detection limits for impurities in a ZnO matrix. These detection levels are for normal depth profiling conditions of blanket wafers.

Figure 1 shows a Overlay of two separate SIMS profiles of an arsenic implant in ZnO. Excellent reproducibility is demonstrated in this example as well as the count-rate-limited detection limits of approximately 1e16 at/cm³.

Figure 2 shows a Overlay of multiple species in a single SIMS profile for a ZnO sample containing implants of Ti, Cr, Ni and Cu.

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