A TEM-based Materials Analysis Study into 22nm FinFET Technology

INTRODUCTION

Fin field-effect-transistor (FinFET) is the basis for modern nanoelectronic semiconductor device fabrication. Figure 1 schematically shows its 3D structure design. The gate wraps around the channel on the raised Silicon fin, in which charge current flows between SiGe source and drain. Compared to traditional planar transistors, FinFET provides greater surface area between gate and channel and thus better control of the electric field and leakage reduction in the “off” state [1].

In this application note, we present a study into the structure, elemental distribution and crystal orientation of a 22nm FinFET structure, using Nanolab Technologies’ state-of-art TEM instruments and other TEM-based analysis techniques including EELS and PED.

Download this resource to learn more!

To enable certain features and improve your experience with us, this site stores cookies on your computer. Please click Continue to provide your authorization and permanently remove this message.

To find out more, please see our privacy policy.