SIMS Detection Limits of Selected Elements in SiC Under Normal Depth Profiling Conditions

Home » SIMS Detection Limits of Selected Elements in SiC Under Normal Depth Profiling Conditions

SIMS is a powerful analytical technique which allows detection of all elements from H to U with excellent sensitivity. The table provides a list of typical detection limits for impurities in a SiC matrix. These detection levels are for normal depth profiling conditions of blanket wafers.

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