SIMS Detection Limits of Selected Elements in GaN Under Normal Depth Profiling Conditions

SIMS is a powerful analytical technique which allows detection of all elements from H to U with excellent sensitivity. The table provides a list of typical detection limits for impurities in GaN matrices. These detection levels are for normal depth profiling conditions of blanket wafers. Detection levels for device samples depends on the size of the available analysis area.

SIMS-Detection-Limits-GaN

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