SIMS Detection Limits of Selected Elements in Silicon Under Bulk Analysis Conditions

SIMS is a powerful analytical technique which allows detection of all elements from H to U with excellent sensitivities. The table provides a list of detection limits for typical dopants and impurities in Si matrix under bulk analysis conditions.


Would you like to learn more about SIMS Detection Limits of Elements in Silicon?

Contact us today for your SIMS detection limits of selected elements in Silicon. Please complete the form below to have an EAG expert contact you.

To enable certain features and improve your experience with us, this site stores cookies on your computer. Please click Continue to provide your authorization and permanently remove this message.

To find out more, please see our privacy policy.