quantification formulae. Several complementary analytical methods needed to be employed to further improve the accuracy of SIMS data.
Over the years, many new metrologies were also developed to investigate the physical properties of ion-implanted materials. Advances in electron microscopy made high-resolution crystallinity analysis of semiconductor materials easier over the years, in combination with accelerator techniques such as RBS. Atom Probe Tomography became available to provide a 3-dimensional atomistic view of these materials. The newly developed method of Differential Hall Effect Metrology (DHEM) complements SIMS, as it measures active dopants in the top 100nm with <1nm resolution.
The complete study of materials modified by ion implantation requires a combination of the above techniques, with the occasional use of others, such as XPS and XRD. Analytical approaches utilizing some or all of the above were discussed in detail in this presentation.