AABC 2022

Typical HR-XRD scan from an epitaxial SiGe structure

High Resolution X-ray Diffraction (HR-XRD) Measurement of Compound Semiconductors

HR-XRD Measurement of Compound Semiconductors can be used to determine the composition of strained layers and thickness.

Ask The Expert – All About SIMS Webinar

In the full webinar we answer pre-submitted questions from our audience about Secondary Ion Mass Spectrometry

Automated Bandgap Measurements in Optoelectronic Devices by Monochromated Electron Energy-Loss Spectroscopy

EAG to Speak at M&M 2024

July 29, 2024
Eurofins EAG Laboratories will be presenting Automated Bandgap Measurements in Optoelectronic Devices by Monochromated Electron Energy-Loss Spectroscopy at Microscopy & Microanalysis on July 29th.

Part 18: Chemical Characterization of Materials

Part 18: Chemical characterization of materials, part of ISO 10993 pertains to evaluating biocompatibility and safety of medical devices.

In the Lab: Investigative Analytical Chemistry

Join us “In the Lab” to learn how investigative analytical chemistry can help solve your product or manufacturing line problems!

igure 1 Center and edge comparison of a HEMT epi measured by PCOR-SIMSSM.

PCOR-SIMS Analysis of GaN HEMT Epitaxial Layers Grown on Silicon Substrates

Point-by-Point Corrected SIMS (PCOR-SIMS) can determine accurate concentrations of matrix elements and dopants in GaN HEMTs.