EAG divides FA characterization tasks into three levels. In each level, we employ optimal techniques for device characterization, defect localization, and ultimately root cause failure analysis. While we can supply all three levels of service, typically our clients perform level one characterizations themselves which identify candidates for level two and level three inspections that EAG carries out.
Level one: Non-destructive, routine characterization techniques are utilized first. This step should be done to every device. These techniques have the lowest spatial resolutions if any at all.
In this step, we typically employ electrical measurements (LIV), along with optical microscopy techniques such as bright/dark field imaging, etc. to identify defective devices.
Level two: Once a defective device is identified in level one, the sample will be brought into a second non-destructive failure localization step.
In this step, we can use optical techniques like Electroluminescence (EL), Optical Beam Induced Resistance Change (OBIRCH), and Emission microscopy (EMMI), or Scanning Electron Microscopy (SEM) based techniques like Electron Beam-Induced Current (EBIC) and Cathodoluminescence (SEM-CL) to further view and isolate the failure site with spatially resolved images.