Evolved Gas Analysis for Material Outgassing Characterization
All materials have trapped gasses inside. Learn how EAG utilizes Evolved Gas Analysis to analyze what gasses are being released.
Microscopy Techniques in the Failure Analysis of Optoelectronics
Optoelectronic devices are playing an increasingly important role in the success of a wide variety of current consumer electronics and industrial applications. These semiconductor devices have been made reliable by careful design and technological advancement. Having carrier recombination rates thousands of times higher than other types of devices inevitably leads to degradation and ultimately failure that is often highly localized. To understand the root cause of failure, it is often very important to catch the problem as early as possible which is both a reliability testing as well as a characterization challenge as initiation sites can be as small as a few nanometers. EAG’s Microscopy group can help.
Microscopy in our failure analysis strategy:
EAG takes an integrated multi-technique approach to best determine cause(s) of failure. Samples are first screened with non-destructive techniques for bulk characterization and defect isolation. Once a defect is isolated, highly localized destructive techniques are applied to take a deeper look to establish the root cause.
EAG divides FA characterization tasks into three levels. In each level, we employ optimal techniques for device characterization, defect localization, and ultimately root cause failure analysis. While we can supply all three levels of service, typically our clients perform level one characterizations themselves which identify candidates for level two and level three inspections that EAG carries out.
Level one: Non-destructive, routine characterization techniques are utilized first. This step should be done to every device. These techniques have the lowest spatial resolutions if any at all.
In this step, we typically employ electrical measurements (LIV), along with optical microscopy techniques such as bright/dark field imaging, etc. to identify defective devices.
Level two: Once a defective device is identified in level one, the sample will be brought into a second non-destructive failure localization step.
In this step, we can use optical techniques like Electroluminescence (EL), Optical Beam Induced Resistance Change (OBIRCH), and Emission microscopy (EMMI), or Scanning Electron Microscopy (SEM) based techniques like Electron Beam-Induced Current (EBIC) and Cathodoluminescence (SEM-CL) to further view and isolate the failure site with spatially resolved images.
Level three: If further, deeper understanding is required, we then perform destructive analysis on the sample to take a detailed look at the microscopic structure of the offending defect(s).
In this step, we typically utilize focused ion beam (FIB) and dual beam instruments (FIB-SEM) for sample preparation and cross-sectional analysis of a defect site. For yet deeper analysis, we employ Transmission Electron Microscopy (TEM) or Scanning Transmission Electron Microscopy (STEM) with EDS or Electron Energy Loss Spectroscopy (EELS) to investigate crystal defects and local composition/chemistry changes.
This deep FA process results in direct evidence for the how and why a device has failed.
More content you might like...
Unveiling the Invisible: An Introduction to Atom Probe Tomography
During this “Ask the Expert” webinar, we dive into the fascinating world of Atom Probe Tomography (APT). Our experts address pre-submitted questions from the audience, focusing on the chemical and structural analysis capabilities of APT.
GC-MS Webinar
In this webinar we will focus on Gas Chromatography-Mass Spectrometry (GC-MS) which allows for the identification of specific molecules
Ask the Expert: Elemental Analysis with ICP
June 27, 2024
During this live Ask the Expert event, we will answer pre-submitted questions from our audience regarding Elemental Analysis with Inductively Coupled Plasma (ICP-OES, ICP-MS, LA-ICP-MS). These techniques provide full survey major, minor, trace element analysis, and purity certification for up to 69 measurable elements.