To identify and quantify contaminants, utilizing both TXRF and SurfaceSIMS.XP provides surface measurements on semiconductor surfaces.
EAG evaluate corrosion and leaching of nickel-rich implanted medical devices including nitinol, stainless steel and MP35N.
ICP-MS is a multi-elemental bulk chemical analysis technique that can determine simultaneously up to 70 elements in a single sample.
Additive manufacturing produces parts with geometric complexity, material composition gradient control, and lightweight structure design.
TGA with hyphenated technologies such as infrared (IR) and/or mass spectrometry (MS) is investigates the outgassing behavior of materials
Characterizing surface topography is possible with a technique called Optical Profilometry (OP) also known as White Light Interferometry.
Complex oxides in energy storage, catalysis, sensor/actuation, optics, epitaxy substrates, electronics, bioceramics, structural ceramics
Characterization of metallurgical failures includes identifying segregation of elemental impurities to the surface of grain boundaries.
Electrothermal vaporization (ETV) coupled with ICP-OES is an exceptionally sensitive solid sampling technique for purity verifications.
Wavelength Dispersive X-Ray Fluorescence Spectroscopy (WDXRF) is an ideal analytical tool for determining or verifying alloy compositions
Failure analysis metals, nonmetals and composites for aircraft, aerospace, transportation, construction, consumer products, and electronics.
Nickel biocompatibility assessments of intravascular stents from EAG includes evaluating corrosion, surfaces and nickel ion release testing.
Laminate failure : Multi-layer laminate by analysis by XPS. Investigation details adhesive failure at a Ni2Mo-Cu interface due to monolayer contamination.
Auger Electron Spectroscopy (AES) is effective in determining the quality of passivation layers to prevent corrosion in medical devices.
Surface Aluminum Characterization highlights advantages of using SurfaceSIMS.XP to determine contamination on processed Si wafers.
SIMS ZnO detection limits of selected elements under normal depth profiling conditions, showing overlay of SIMS profiles of arsenic implant
Impurities adversely affect performance of a CIGS solar cell, with varying concentrations – SIMS can help measure representative sampling.
Medical device corrosion resistance optimized by using Auger depth profile & oxide layer thickness for device surface characterization.