Two-dimensional Mapping of Matrix Elements in a Microelectronic Device by STEM-EELS
Two-dimensional mapping of matrix elements in electronic devices is discussed, as provided by STEM and EELS techniques from EAG Laboratories.
Point-by-Point CORrected-SIMS (PCOR-SIMSSM) Services
PCOR-SIMS is an EAG proprietary technique that can measure layer thickness, composition, and doping profiles.
PED Webinar
In this webinar we introduce Precession Electron Diffraction (PED) which has been essential to nano-scale structural analysis
TEM Webinar
In this webinar we will introduce the principles of Transmission Electron Microscopy (TEM) with a focus on real-world problem-solving.
Atomic-Resolution Secondary Electron Imaging
AC-STEM with Secondary Electron (SE) imaging provides the unique capability of evaluating specimen surface morphology with atomic-resolution.
Types of crystal defects that can be observed with TEM
Transmission Electron Microscopy is often used to evaluate defects in crystals, but not all defects can be observed with TEM
Material structural analysis power of PED at nanometer scale
Examples of crystal grain orientation mapping and strain mapping in 7nm EUV technology IC chip and strained Silicon
A TEM-based Materials Analysis Study into 22nm FinFET Technology
A study into the structure, elemental distribution and crystal orientation of a 22nm FinFET using TEM based analysis techniques
A materials analysis study into FinFET technology
We provide a materials analysis study into the comparison between 22 nm node and 7 nm node FinFET technologies, using TEM-based techniques.
Scanning Capacitance Microscopy (SCM) of a Power MOSFET
A commercially available power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) was analyzed using SCM.
SIMS Analysis Tips – What is the effect of mass interference?
Secondary ion mass spectra measured by SIMS may not always provide information from the target element alone.
Secondary Ion Mass Spectrometry Survey Depth Profile
Survey-SIMS Depth Profiles analyze for dopants & impurities in a material without having prior knowledge in the structure being evaluated.
SIMS Detection Limits of Selected Elements in Si Under Bulk Analysis Conditions
SIMS detection limits of selected elements in Silicon, providing a a list of detection limits for typical dopants and impurities
SIMS Detection Limits of Selected Elements in Si and SiO2 Under Normal Depth Profiling Conditions
SIMS Detection Limits of Selected Elements in Si and SiO2 Under Normal Depth Profiling Conditions SIMS is a powerful analytical technique which allows detection of all
Secondary Ion Mass Spectrometry (SIMS) Services
SIMS services from EAG is featured in this technique note, including sample data, showing how SIMS detects low concentrations of impurities
Rutherford Backscattering Spectrometry (RBS) Services
View typical RBS services results from EAG used for compositional thin film analysis for semiconductors, optimal coatings and more.
SIMS Analysis of Nitrogen in Silicon Carbide Using Raster Change Technique
Raster change technique is used for SIMS measurement of very low levels of nitrogen in Silicon carbide by EAG Laboratories.
SIMS Measurements of Silicon Carbide
Silicon Carbide SIMS Measurements provide valuable data for process control and problem solving in wafer growth and device manufacturing.
Silicon Wafer PV – Application Discussion
Silicon wafer solar cells and the analytical techniques used to investigate failures, bulk defects and other materials characterization.
Surface Analysis of α-Si, µc-Si Thin Film PV
Surface analysis lab techniques on α-Si thin film PV, microcrystalline Si, nanocrystalline Si, amorphous SiGe, & microcrystalline SiC
XPS Analysis of Disposable Gloves
XPS Analysis of Disposable Gloves assesses materials exposed during product manufacturing to make sure contamination is not introduced.
Semiconductor Stress Measurements by Raman Spectroscopy
Semiconductor stress measurements by Raman Spectroscopy helps control problems related to stress control in semiconductor devices, from EAG.
The Total Solution For Surface Contamination Measurements
TXRF AND SURFACESIMS.XP is the total solution for surface contamination measurements on semiconductor surfaces, from EAG Laboratories.
Depth Profile Characterization of Low-K Materials Using Secondary Ion Mass Spectrometry
SIMS depth profile characterization provides accurate quantification for all measured species and matrix using our unique reference materials
SIMS Detection Limits of Selected Elements in SiC Under Normal Depth Profiling Conditions
SIMS detection of all elements from H to U with excellent sensitivity. The table provides detection limits for impurities in a SiC matrix.
SIMS Analysis of Individual SiC Particles for Accurate Bulk Concentration Measurement
EAG’s SIMS Analysis Individual SiC Particles using a special sample preparation technique eliminates contributions from surface contamination