
Two-dimensional Mapping of Matrix Elements in a Microelectronic Device by STEM-EELS
Two-dimensional mapping of matrix elements in electronic devices is discussed, as provided by STEM and EELS techniques from EAG Laboratories.
Home » Silicon
Two-dimensional mapping of matrix elements in electronic devices is discussed, as provided by STEM and EELS techniques from EAG Laboratories.
PCOR-SIMS is an EAG proprietary technique that can measure layer thickness, composition, and doping profiles.
In this webinar we introduce Precession Electron Diffraction (PED) which has been essential to nano-scale structural analysis
In this webinar we will introduce the principles of Transmission Electron Microscopy (TEM) with a focus on real-world problem-solving.
AC-STEM with Secondary Electron (SE) imaging provides the unique capability of evaluating specimen surface morphology with atomic-resolution.
Transmission Electron Microscopy is often used to evaluate defects in crystals, but not all defects can be observed with TEM
Examples of crystal grain orientation mapping and strain mapping in 7nm EUV technology IC chip and strained Silicon
A study into the structure, elemental distribution and crystal orientation of a 22nm FinFET using TEM based analysis techniques
We provide a materials analysis study into the comparison between 22 nm node and 7 nm node FinFET technologies, using TEM-based techniques.
A commercially available power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) was analyzed using SCM.
Secondary ion mass spectra measured by SIMS may not always provide information from the target element alone.
Survey-SIMS Depth Profiles analyze for dopants & impurities in a material without having prior knowledge in the structure being evaluated.
SIMS detection limits of selected elements in Silicon, providing a a list of detection limits for typical dopants and impurities
SIMS Detection Limits of Selected Elements in Si and SiO2 Under Normal Depth Profiling Conditions SIMS is a powerful analytical technique which allows detection of all
SIMS services from EAG is featured in this technique note, including sample data, showing how SIMS detects low concentrations of impurities
View typical RBS services results from EAG used for compositional thin film analysis for semiconductors, optimal coatings and more.
Raster change technique is used for SIMS measurement of very low levels of nitrogen in Silicon carbide by EAG Laboratories.
Silicon Carbide SIMS Measurements provide valuable data for process control and problem solving in wafer growth and device manufacturing.
Silicon wafer solar cells and the analytical techniques used to investigate failures, bulk defects and other materials characterization.
Surface analysis lab techniques on α-Si thin film PV, microcrystalline Si, nanocrystalline Si, amorphous SiGe, & microcrystalline SiC
XPS Analysis of Disposable Gloves assesses materials exposed during product manufacturing to make sure contamination is not introduced.
Semiconductor stress measurements by Raman Spectroscopy helps control problems related to stress control in semiconductor devices, from EAG.
TXRF AND SURFACESIMS.XP is the total solution for surface contamination measurements on semiconductor surfaces, from EAG Laboratories.
SIMS depth profile characterization provides accurate quantification for all measured species and matrix using our unique reference materials
SIMS detection of all elements from H to U with excellent sensitivity. The table provides detection limits for impurities in a SiC matrix.
EAG’s SIMS Analysis Individual SiC Particles using a special sample preparation technique eliminates contributions from surface contamination
To enable certain features and improve your experience with us, this site stores cookies on your computer. Please click Continue to provide your authorization and permanently remove this message.
To find out more, please see our privacy policy.