Electrochromic Glass, also known as smart glass, is a newer technology which allows users to turn glass opaque when needed, and clear when not.
Aerospace Materials Testing for Tunnel Junction Solar Cells Science has opened many doors in its advancement over the centuries.
In the full webinar we will introduce analyzing VCSELs with a focus on secondary ion mass spectrometry (SIMS)
Demand for compound semiconductors has rapidly grown recently. During this live event we answered questions surrounding the Materials Characterization of GaN HEMT power transistors.
Surface Aluminum Characterization highlights advantages of using SurfaceSIMS.XP to determine contamination on processed Si wafers.
To identify and quantify contaminants, utilizing both TXRF and SurfaceSIMS.XP provides surface measurements on semiconductor surfaces.
Glass development and glass product verification requires the measurement of composition with high accuracy.
SIMS depth profile characterization provides accurate quantification for all measured species and matrix using our unique reference materials
25th May 2023
Eurofins EAG Laboratories tackled the problem of quantification of both major and minor elements in nonuniform, multi-element matrices with continuously graded composition changes using Point-by-point CORrected-SIMS.
III-V materials partially provide us with the ever evolving and changing technological advances we enjoy today.
For over 40 years, EAG has been involved in the entire glass value chain, from raw starting materials to final products.
Application of SIMS, XPS/ESCA, SEM and ICP-MS to test for appearance of glass lamellae in parenteral pharmaceutical solutions, by EAG
Measurement of dopant & impurity concentrations in compound semiconductors by SIMS with low detection limits & excellent depth resolution.
ALD for semiconductors can produce films that are high in H, C, O and metals. XPS and SIMS depth profile analysis for composition & purity.
SIMS analysis is used to measure trace impurities in various materials such as semiconductors, metal, and insulating materials
Ion-exchanged glass is used in a variety of applications where strength, durability, and resistance to damage are important. Applications like smartphone screens.
EAG’s material and microelectronic testing service is dedicated to providing the best information from ensuring the purity of starting materials, to prototype testing of devices in the ramp up towards full-scale production.
28th September 2022
As ion implantation technology for semiconductors evolved, new metrologies to help its progress needed to be developed in parallel. Some of the current metrologies owe their present sophistication to this evolution.
pHEMT device analysis by SIMS improves device performance and aids in failure analysis of III-V high-speed transistor structures.
Point-by-Point Corrected SIMS (PCOR-SIMS) can determine accurate concentrations of matrix elements and dopants in GaN HEMTs.
PCOR-SIMS is an EAG proprietary technique that can measure layer thickness, composition, and doping profiles.
When information is required from a compound seminconductor, EAG can depackage and deprocess the sample, & fully characterize it.
Impurities adversely affect performance of a CIGS solar cell, with varying concentrations – SIMS can help measure representative sampling.
Survey-SIMS Depth Profiles analyze for dopants & impurities in a material without having prior knowledge in the structure being evaluated.
EAG’s SIMS Analysis Individual SiC Particles using a special sample preparation technique eliminates contributions from surface contamination
Raster change technique is used for SIMS measurement of very low levels of nitrogen in Silicon carbide by EAG Laboratories.
Secondary ion mass spectra measured by SIMS may not always provide information from the target element alone.
Atomic Layer Deposition technology aids in the demand for computational advancement in the microelectronics industry.
SIMS Detection Limits OF Selected Elements in GaAs, with detection levels are for normal depth profiling conditions of blanket wafers.
SIMS Detection Limits of Selected Elements in GaN. Normal depth profiling conditions, blanket wafers. Detection levels depends on area.
SIMS analytical technique typical detection limits for impurities in a HgCdTe matrix for normal depth profiling conditions.
SIMS Detection Limits of Selected Elements in InP for impurities in InP matrices with normal depth profiling conditions.
SIMS Detection Limits of Selected Elements in Si and SiO2 Under Normal Depth Profiling Conditions SIMS is a powerful analytical technique which allows detection of all
SIMS detection limits of selected elements in Silicon, providing a a list of detection limits for typical dopants and impurities
SIMS detection of all elements from H to U with excellent sensitivity. The table provides detection limits for impurities in a SiC matrix.
SIMS ZnO detection limits of selected elements under normal depth profiling conditions, showing overlay of SIMS profiles of arsenic implant
We have improved the SIMS measurement precision using the ASTM F 2139 test method and extended the detection capability into the 1×1013/cm3 levels.
20th September 2022
Dive into how scientists at Eurofins EAG Laboratories tackled the problem of quantification of both major and minor elements in non-uniform, multi-element samples with abrupt or continuously graded composition changes using PCOR-SIMS.
PCOR-SIMS was originally developed to analyze Silicon Germanium (SiGe) devices for the communications industry.
VCSELs have several advantages, such as a higher modulation speed, which make them great for technological innovations.
Low-E Coatings on glass are a high efficiency protection of a glass surface for transparency. These coatings help the glass become energy efficient to allow the sunlight to come in or reflect out.
EAG Laboratories to provide comprehensive process development and failure analysis of vertical cavity surface emitting lasers.
High Depth Resolution Analysis will play a very important role in the electronic device industry as devices become smaller and smaller.
Comparing and summarizing the features of magnetic field type SIMS instruments and quadrupole type SIMS instruments