A Deep Dive into Dynamic SIMS vs. static-SIMS
Different types of SIMS analyses exist. The two main types include Dynamic SIMS (high current) and static-SIMS (low current).
A Little Spark: Testing Electrochromic Glass for Material Characterization and More
Electrochromic Glass, also known as smart glass, is a newer technology which allows users to turn glass opaque when needed, and clear when not.
Advances with Gallium Oxide
Gallium oxide has the potential to replace or substitute gallium nitride for power conversion in electric trains and vehicles.
Aerospace Materials Testing for Tunnel Junction Solar Cells
Aerospace Materials Testing for Tunnel Junction Solar Cells Science has opened many doors in its advancement over the centuries.
Alkali Contamination in Thin Dielectric Films
Alkali contamination can compromise performance of oxide and other dielectric layers in electronic devices.
Analyzing Red LEDs with PCOR-SIMS
Televisions, computer screens, cell phone screens etc. are getting clearer, sharper, brighter and use much less power. This is all possible through LEDs.
Analyzing Vertical Cavity Surface Emitting Lasers Webinar
In the full webinar we will introduce analyzing VCSELs with a focus on secondary ion mass spectrometry (SIMS)
Ask The Expert – All About SIMS Webinar
In the full webinar we answer pre-submitted questions from our audience about Secondary Ion Mass Spectrometry
Ask the Experts: Materials Characterization of GaN Power Transistors
Demand for compound semiconductors has rapidly grown recently. During this live event we answered questions surrounding the Materials Characterization of GaN HEMT power transistors.
Atomic Layer Deposition (ALD) Analysis
Atomic layer deposition analysis helps you meet ALD specifications for composition, thickness, and crystallinity.
Characterization of Surface Aluminum Contamination on Processed Silicon Wafers
Surface Aluminum Characterization highlights advantages of using SurfaceSIMS.XP to determine contamination on processed Si wafers.
Characterization of Surface Metallic Contamination
To identify and quantify contaminants, utilizing both TXRF and SurfaceSIMS.XP provides surface measurements on semiconductor surfaces.
Characterizing Annealed ULE B Implants
EAG’s PCOR-SIMS methodology includes point-to-point correction resulting in the most accurate SIMS profiling yet for ultra shallow implants.
Coatings on glass
Investigation of the layer structure, identity and composition of an unknown coating system can be done in several ways.
Coffee and Conversations – Thin Film Characterization
May 15, 2024
Please join us for coffee and conversations! Enjoy a cup of coffee and pastries as you get to know our technical experts.
Compositional analysis of glass and glass products
Glass development and glass product verification requires the measurement of composition with high accuracy.
Depth Profile Characterization of Low-K Materials Using Secondary Ion Mass Spectrometry
SIMS depth profile characterization provides accurate quantification for all measured species and matrix using our unique reference materials
EAG Scientists Publish Paper on SIMS Quantification
25th May 2023
Eurofins EAG Laboratories tackled the problem of quantification of both major and minor elements in nonuniform, multi-element matrices with continuously graded composition changes using Point-by-point CORrected-SIMS.
GaAs-Based Transistors Pave the Way for Communication Efficiencies
III-V materials partially provide us with the ever evolving and changing technological advances we enjoy today.
Glass as a Critical Player in the Pharmaceutical Industry
For over 40 years, EAG has been involved in the entire glass value chain, from raw starting materials to final products.
Glass Delamination in Pharmaceutical Vials Related to Surface Chemical Changes
Application of SIMS, XPS/ESCA, SEM and ICP-MS to test for appearance of glass lamellae in parenteral pharmaceutical solutions, by EAG
High Depth Resolution SIMS Profiles for Compound Semiconductor Devices
Measurement of dopant & impurity concentrations in compound semiconductors by SIMS with low detection limits & excellent depth resolution.
Hydrogen, Carbon, Oxygen and Iron Contamination Measurements in ALD Films using XPS and SIMS
ALD for semiconductors can produce films that are high in H, C, O and metals. XPS and SIMS depth profile analysis for composition & purity.
III-V Multi-Junction PV – Application Discussion
III-V solar cell technology for concentrator PV systems is the focus of this app note, illustrating the way that surface analysis can help
Impurity depth direction analysis of various glass materials by SIMS
SIMS analysis is used to measure trace impurities in various materials such as semiconductors, metal, and insulating materials
Ion-Exchanged Glass: Smart Technology for Smartphones
Ion-exchanged glass is used in a variety of applications where strength, durability, and resistance to damage are important. Applications like smartphone screens.
LED Analysis
LED characterization, from process control to failure analysis to construction analysis, EAG Laboratories supports your LED analysis needs.
Materials Characterization for a Semiconductor Testing Customer
EAG’s material and microelectronic testing service is dedicated to providing the best information from ensuring the purity of starting materials, to prototype testing of devices in the ramp up towards full-scale production.
Metrologies to Study Ion Implanted Semiconductor Materials
28th September 2022
As ion implantation technology for semiconductors evolved, new metrologies to help its progress needed to be developed in parallel. Some of the current metrologies owe their present sophistication to this evolution.
Optimizing 2-D Electron Density in pHEMTs Using Secondary Ion Mass Spectrometry
pHEMT device analysis by SIMS improves device performance and aids in failure analysis of III-V high-speed transistor structures.
PCOR-SIMS Analysis of GaN HEMT Epitaxial Layers Grown on Silicon Substrates
Point-by-Point Corrected SIMS (PCOR-SIMS) can determine accurate concentrations of matrix elements and dopants in GaN HEMTs.
Point-by-Point Corrected (PCOR) SIMS Brochure
Measure layer thickness, composition, and doping profiles more accurately than regular SIMS analysis.
Point-by-Point CORrected-SIMS (PCOR-SIMS) Services
PCOR-SIMS is an EAG proprietary technique that can measure layer thickness, composition, and doping profiles.
Quantum Computers – The Supercomputer
Quantum computing has the potential to revolutionize various fields by solving problems that are currently intractable for classical computers.
Reverse Engineering of Compound Semiconductor Optoelectronics
When information is required from a compound seminconductor, EAG can depackage and deprocess the sample, & fully characterize it.
Sampling of Fe in CIGS, Solar Cell Using Large Area SIMS
Impurities adversely affect performance of a CIGS solar cell, with varying concentrations – SIMS can help measure representative sampling.
Scrutinizing VCSELs by SIMS
An advanced form of SIMS, PCOR-SIMS identifies dopants, impurities, compositions and thicknesses in various layers of VCSELs
Secondary Ion Mass Spectrometry (SIMS) Services
SIMS services from EAG is featured in this technique note, including sample data, showing how SIMS detects low concentrations of impurities
Secondary Ion Mass Spectrometry (SIMS) Tutorial
SIMS tutorial from EAG Laboratories includes SIMS primary ion sources, ion energy analyzers, Sputtering and elemental effects
Secondary Ion Mass Spectrometry Survey Depth Profile
Survey-SIMS Depth Profiles analyze for dopants & impurities in a material without having prior knowledge in the structure being evaluated.
Silicon Wafer PV – Application Discussion
Silicon wafer solar cells and the analytical techniques used to investigate failures, bulk defects and other materials characterization.
SIMS Analysis of Al and Ga Diffusion
SIMS detects very low concentrations of dopants and impurities. It has been used to study the diffusion of Al and Ga.
SIMS Analysis of Individual SiC Particles for Accurate Bulk Concentration Measurement
EAG’s SIMS Analysis Individual SiC Particles using a special sample preparation technique eliminates contributions from surface contamination
SIMS Analysis of Nitrogen in Silicon Carbide Using Raster Change Technique
Raster change technique is used for SIMS measurement of very low levels of nitrogen in Silicon carbide by EAG Laboratories.
SIMS Analysis Tips – What is the effect of mass interference?
Secondary ion mass spectra measured by SIMS may not always provide information from the target element alone.
SIMS Analytical Services for Compound Semiconductor High Speed Electronics
Compound semiconductors are responsible for the explosive growth of high-speed electronics, especially in communication applications and advanced mobile appliances.
SIMS Characterization of Atomic Layer Deposition in Electronic Applications
Atomic Layer Deposition technology aids in the demand for computational advancement in the microelectronics industry.
SIMS Detection Limits of Selected Elements in GaAs Under Normal Depth Profiling Conditions
SIMS Detection Limits OF Selected Elements in GaAs, with detection levels are for normal depth profiling conditions of blanket wafers.
SIMS Detection Limits of Selected Elements in GaN Under Normal Depth Profiling Conditions
SIMS Detection Limits of Selected Elements in GaN. Normal depth profiling conditions, blanket wafers. Detection levels depends on area.
SIMS Detection Limits of Selected Elements in HgCdTe Under Normal Depth Profiling Conditions
SIMS analytical technique typical detection limits for impurities in a HgCdTe matrix for normal depth profiling conditions.
SIMS Detection Limits of Selected Elements in InP Under Normal Depth Profiling Conditions
SIMS Detection Limits of Selected Elements in InP for impurities in InP matrices with normal depth profiling conditions.
SIMS Detection Limits of Selected Elements in Si and SiO2 Under Normal Depth Profiling Conditions
SIMS Detection Limits of Selected Elements in Si and SiO2 Under Normal Depth Profiling Conditions SIMS is a powerful analytical technique which allows detection of all
SIMS Detection Limits of Selected Elements in Si Under Bulk Analysis Conditions
SIMS detection limits of selected elements in Silicon, providing a a list of detection limits for typical dopants and impurities
SIMS Detection Limits of Selected Elements in SiC Under Normal Depth Profiling Conditions
SIMS detection of all elements from H to U with excellent sensitivity. The table provides detection limits for impurities in a SiC matrix.
SIMS Detection Limits of Selected Elements in ZnO Under Normal Depth Profiling Conditions
SIMS ZnO detection limits of selected elements under normal depth profiling conditions, showing overlay of SIMS profiles of arsenic implant
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SIMS Measurement of Bulk [N] in Nitrogen-doped Cz-Si: Long Term Precision Results
We have improved the SIMS measurement precision using the ASTM F 2139 test method and extended the detection capability into the 1×1013/cm3 levels.
SIMS Measurements of Silicon Carbide
Silicon Carbide SIMS Measurements provide valuable data for process control and problem solving in wafer growth and device manufacturing.
SIMS Quantification Presented at SIMS23 Conference
20th September 2022
Dive into how scientists at Eurofins EAG Laboratories tackled the problem of quantification of both major and minor elements in non-uniform, multi-element samples with abrupt or continuously graded composition changes using PCOR-SIMS.
SIMS Webinar
In this webinar we will focus on Dynamic Secondary Ion Mass Spectrometry which used to investigate the elemental structure of materials.
SIMS: Do You Remember When a Factor of 2 Was Good Enough?
A paper on the early days of SIMS quantification and its evolution throughout the years.
Standards for SIMS
EAG Laboratories can offer a range of standards for SIMS used to calibrate materials such as Si, SiO2, SiN, Wsi, TiN, TiW, Al, GaAs, InP.
Surface Analysis of α-Si, µc-Si Thin Film PV
Surface analysis lab techniques on α-Si thin film PV, microcrystalline Si, nanocrystalline Si, amorphous SiGe, & microcrystalline SiC
The Birth of PCOR-SIMS for Silicon Germanium (SiGe) Devices
PCOR-SIMS was originally developed to analyze Silicon Germanium (SiGe) devices for the communications industry.
The Importance of VCSELs in Technological Development
VCSELs have several advantages, such as a higher modulation speed, which make them great for technological innovations.
The Ultimate Protection – Low Emissivity Coatings on Glass
Low-E Coatings on glass are a high efficiency protection of a glass surface for transparency. These coatings help the glass become energy efficient to allow the sunlight to come in or reflect out.
Trace Analysis Webinar
In this webinar we introduce Trace Analysis of Advanced Materials by Direct Solid-Sampling and Solution-Based Techniques
Understanding VCSELs: From Epitaxial Wafer Growth to Failure Analysis
EAG Laboratories to provide comprehensive process development and failure analysis of vertical cavity surface emitting lasers.
Using SIMS to Scrutinize HEMTs
HEMTs characterization using SIMS helps to uncover troublesome impurities, optimize epitaxial layer growth and aid failure analysis
Utilizing High Depth Resolution for Measuring Layers at an Atomic Level
High Depth Resolution Analysis will play a very important role in the electronic device industry as devices become smaller and smaller.
VCSELs as a Critical Component for the Consumer Electronics 3D Sensing Market
Vertical-cavity surface-emitting lasers, or VCSELs, play a major role in the consumer electronics 3D sensing industry.
What is the difference between magnetic field type SIMS and quadrupole type SIMS?
Comparing and summarizing the features of magnetic field type SIMS instruments and quadrupole type SIMS instruments
What is the difference between SIMS and TOF-SIMS?
What is the difference between SIMS and TOF-SIMS? SIMS (Secondary Ion Mass Spectrometry) and TOF-SIMS (Time of Flight-SIMS) are the same in terms of mass
What is the matrix effect?
Compound semiconductor films are grown with different matrix compositions that affect the elemental sensitivities and sputtering rates