Aerospace Materials Testing for Tunnel Junction Solar Cells Science has opened many doors in its advancement over the centuries.
In the full webinar we will introduce analyzing VCSELs with a focus on secondary ion mass spectrometry (SIMS)
During this live Ask the Expert event, we will answer pre-submitted questions from our audience regarding materials analysis with various surface contact and optical analytical techniques.
Demand for compound semiconductors has rapidly grown recently. During this live event we answered questions surrounding the Materials Characterization of GaN HEMT power transistors.
In this application note, we show how different signals obtained through AC-STEM can provide direct observation of local polarity switching.
SEM-Cathodoluminescence is used for a wide variety of luminescent materials and devices. It allows for the inspection of optical properties with sub-um spatial resolutions combined with SEM imaging having 3-5nm spatial resolution.
In the full webinar we introduce Characterization and Failure Analysis of Optoelectronic Materials and Devices
Fine control over structural and compositional uniformity during epitaxial growth of compound semiconductors is critical for developing reliable and efficient devices.
III-V materials partially provide us with the ever evolving and changing technological advances we enjoy today.
Measurement of dopant & impurity concentrations in compound semiconductors by SIMS with low detection limits & excellent depth resolution.
HR-XRD Measurement of Compound Semiconductors can be used to determine the composition of strained layers and thickness.
Auger Identification Interface Contamination is discussed regarding the elimination of contaminants for successful semiconductors.
EAG’s material and microelectronic testing service is dedicated to providing the best information from ensuring the purity of starting materials, to prototype testing of devices in the ramp up towards full-scale production.
EAG divides FA tasks into three levels. In each level, we employ optimal techniques for device characterization, defect localization, and root cause failure analysis.
Complex oxides in energy storage, catalysis, sensor/actuation, optics, epitaxy substrates, electronics, bioceramics, structural ceramics
pHEMT device analysis by SIMS improves device performance and aids in failure analysis of III-V high-speed transistor structures.
Point-by-Point Corrected SIMS (PCOR-SIMS) can determine accurate concentrations of matrix elements and dopants in GaN HEMTs.
PCOR-SIMS is an EAG proprietary technique that can measure layer thickness, composition, and doping profiles.
STEM provides images of dislocations with simplified contrast, allowing rapid dislocation typing in both cross section and plan view samples.
When information is required from a compound seminconductor, EAG can depackage and deprocess the sample, & fully characterize it.
View typical RBS services results from EAG used for compositional thin film analysis for semiconductors, optimal coatings and more.
EAG’s SIMS Analysis Individual SiC Particles using a special sample preparation technique eliminates contributions from surface contamination
Raster change technique is used for SIMS measurement of very low levels of nitrogen in Silicon carbide by EAG Laboratories.
Compound semiconductors are responsible for the explosive growth of high-speed electronics, especially in communication applications and advanced mobile appliances.
SIMS Detection Limits OF Selected Elements in GaAs, with detection levels are for normal depth profiling conditions of blanket wafers.
SIMS Detection Limits of Selected Elements in GaN. Normal depth profiling conditions, blanket wafers. Detection levels depends on area.
SIMS analytical technique typical detection limits for impurities in a HgCdTe matrix for normal depth profiling conditions.
SIMS Detection Limits of Selected Elements in InP for impurities in InP matrices with normal depth profiling conditions.
SIMS detection of all elements from H to U with excellent sensitivity. The table provides detection limits for impurities in a SiC matrix.
Contamination control and defect reduction are critical issues in the manufacturing process of compound semiconductor devices which can impact the performance of the end product. We can provide valuable insights to identify contaminants and characterize materials throughout the product lifecycle.
PCOR-SIMS was originally developed to analyze Silicon Germanium (SiGe) devices for the communications industry.
VCSELs have several advantages, such as a higher modulation speed, which make them great for technological innovations.
Transmission Electron Microscopy is often used to evaluate defects in crystals, but not all defects can be observed with TEM
Electrothermal vaporization (ETV) coupled with ICP-OES is an exceptionally sensitive solid sampling technique for purity verifications.
EAG Laboratories to provide comprehensive process development and failure analysis of vertical cavity surface emitting lasers.
Improper aperture oxidation can lead to high stress or introduce unintended defects ultimately resulting in failure. Here, we present a study using STEM EELS to provide a method for measuring differences in oxygen bonding.