PCOR-SIMS is an EAG proprietary technique that can measure layer thickness, composition, and doping profiles.
In the full webinar we will introduce analyzing VCSELs with a focus on secondary ion mass spectrometry (SIMS)
In the full webinar we introduce Characterization and Failure Analysis of Optoelectronic Materials and Devices
STEM provides images of dislocations with simplified contrast, allowing rapid dislocation typing in both cross section and plan view samples.
VCSELs have several advantages, such as a higher modulation speed, which make them great for technological innovations.
PCOR-SIMS was originally developed to analyze Silicon Germanium (SiGe) devices for the communications industry.
Transmission Electron Microscopy is often used to evaluate defects in crystals, but not all defects can be observed with TEM
EAG Laboratories to provide comprehensive process development and failure analysis of vertical cavity surface emitting lasers.
Complex oxides in energy storage, catalysis, sensor/actuation, optics, epitaxy substrates, electronics, bioceramics, structural ceramics
Electrothermal vaporization (ETV) coupled with ICP-OES is an exceptionally sensitive solid sampling technique for purity verifications.
pHEMT device analysis by SIMS improves device performance and aids in failure analysis of III-V high-speed transistor structures.
SIMS Detection Limits of Selected Elements in InP for impurities in InP matrices with normal depth profiling conditions.
SIMS Detection Limits of Selected Elements in GaN. Normal depth profiling conditions, blanket wafers. Detection levels depends on area.
SIMS Detection Limits OF Selected Elements in GaAs, with detection levels are for normal depth profiling conditions of blanket wafers.
View typical RBS services results from EAG used for compositional thin film analysis for semiconductors, optimal coatings and more.
Raster change technique is used for SIMS measurement of very low levels of nitrogen in Silicon carbide by EAG Laboratories.
Auger Identification Interface Contamination is discussed regarding the elimination of contaminants for successful semiconductors.
Measurement of dopant & impurity concentrations in compound semiconductors by SIMS with low detection limits & excellent depth resolution.
SIMS detection of all elements from H to U with excellent sensitivity. The table provides detection limits for impurities in a SiC matrix.
Point-by-Point Corrected SIMS (PCOR-SIMS) can determine accurate concentrations of matrix elements and dopants in GaN HEMTs.
EAG’s SIMS Analysis Individual SiC Particles using a special sample preparation technique eliminates contributions from surface contamination
When information is required from a compound seminconductor, EAG can depackage and deprocess the sample, & fully characterize it.
HR-XRD Measurement of Compound Semiconductors can be used to determine the composition of strained layers and thickness.