30keV Scanning Transmission Electron Microscopy
30keV Scanning Transmission Electron Microscopy (STEM) can provide 3Å resolution bright field (BF) and dark field (DF, ADF, HAADF) images
A materials analysis study into FinFET technology
We provide a materials analysis study into the comparison between 22 nm node and 7 nm node FinFET technologies, using TEM-based techniques.
A Picture is Worth a Thousand Words – TEM, STEM and AC-STEM
TEM, STEM and AC-STEM techniques deliver high resolution images providing a detailed view of a material or product.
A TEM-based Materials Analysis Study into 22nm FinFET Technology
A study into the structure, elemental distribution and crystal orientation of a 22nm FinFET using TEM based analysis techniques
Aberration Corrected Scanning Transmission Electron Microscopy (AC-STEM) Services
Aberration Corrected Scanning Transmission Electron Microscopy (AC-STEM) significantly improves the resolution of the traditional STEM tools.
Accelerating the Development of Lithium-Ion Batteries
23rd October 2022
Industry Service Labs play a critical role in the battery community by providing fast and professional service. Learn how Eurofins EAG Laboratories can help!
Advanced Microscopy of Compound Semiconductors
In this webinar, we will explore the variety of microscopy techniques available at Eurofins EAG commonly utilized to characterize compound semiconductor materials.
Advances with Gallium Oxide
Gallium oxide has the potential to replace or substitute gallium nitride for power conversion in electric trains and vehicles.
Analysis of CIGS Thin Film PV
CIGS Thin Film PV performance reliability and uniformity as manufacturing is scaled up, can be optimized using materials characterization.
Assessing Local Polarity in III-Nitrides Using AC-STEM
In this application note, we show how different signals obtained through AC-STEM can provide direct observation of local polarity switching.
Atom-By-Atom Distance Measurements
In this application note, we show the possibility to extract distance information at an atom-column to atom-column basis with picometer level precision.
Atomic Elemental Mapping of Lithium-ion Materials by EELS
With the demand of lithium-ion batteries, it is critical to understand the structure and composition with high spatial resolution.
Atomic Resolution EDS
Advances in thin film growth has created a need for characterizing structure and chemistry at the atomic scale using EDS.
Atomic-Resolution Secondary Electron Imaging
AC-STEM with Secondary Electron (SE) imaging provides the unique capability of evaluating specimen surface morphology with atomic-resolution.
Battery Technology
Battery materials characterization services includes analysis of raw materials, surface chemistry, composition, morphology and uniformity
Biomedical Morphology
Biomedical Morphology and Microstructure through imaging analysis – characterizing crystallographic phase and producing elemental maps.
Characterization of Bioceramics for Surgical Implants: Part I – Precursor Qualification
This paper will demonstrate how analytical tools can be used for the quality control of hydroxyapatite and β-tricalcium phosphate powders
Characterization of Crystalline structures – SEM-EBSD vs TEM-PED
Besides images provided by SEM and TEM, different attachments can be added to reveal crystalline information, including (SEM-EBSD) and TEM (TEM-PED).
Checking Local Bonding in VCSEL Apertures
There are many key components of the VCSEL, but one challenging region is the oxide aperture. The oxide aperture is responsible for current confinement, and it is important to have high quality oxidation to prevent failure of the device.
Coatings on glass
Investigation of the layer structure, identity and composition of an unknown coating system can be done in several ways.
EDS & EELS Webinar
In this webinar we introduce Energy Dispersive X-ray Spectroscopy (EDS) and Electron Energy Loss Spectroscopy (EELS)
Evaluating Epitaxy Quality in Compound Semiconductors Using AC-STEM/EDS
Fine control over structural and compositional uniformity during epitaxial growth of compound semiconductors is critical for developing reliable and efficient devices.
Evaluation of Dislocation Type in GaN Using STEM
Threading dislocation evaluation of dislocation type in GaN using STEM (AN463) by EAG Laboratories supports LED development and quality.
Improving Performance and Safety of Lithium-Ion Batteries: Characterizing Materials and Interfaces
Battery characterization improves lithium-ion battery safety and performance using techniques such as SEM, TEM, XPS, GDMS, FTIR, ICP-OES, Raman and failure analysis
In Vitro Diagnostics Testing
In Vitro Diagnostics test and system development support from the materials sciences experts at EAG Laboratories, contact us today!
Latest Advancement in Transmission Electron Microscopy
9th December 2020
EAG Laboratories has completed installation of a ThermoFisher Scientific Themis Z Transmission Electron Microscope (TEM)
LED Analysis
LED characterization, from process control to failure analysis to construction analysis, EAG Laboratories supports your LED analysis needs.
Material structural analysis power of PED at nanometer scale
Examples of crystal grain orientation mapping and strain mapping in 7nm EUV technology IC chip and strained Silicon
Microscopy Techniques in the Failure Analysis of Optoelectronics
EAG divides FA tasks into three levels. In each level, we employ optimal techniques for device characterization, defect localization, and root cause failure analysis.
PED Webinar
In this webinar we introduce Precession Electron Diffraction (PED) which has been essential to nano-scale structural analysis
Plasma FIB – A better alternative to traditional FIB?
PFIB differs from traditional FIB in that it uses various gases such as Xe, Ar, oxygen or nitrogen to generate a plasma that is used to remove material from a sample.
Plasma FIB Services are Now Available
15th September 2023
EAG Laboratories is pleased to announce a new addition to our wide range of Advanced Microscopy techniques. We now offer Plasma FIB (PFIB) services!
Presentation at TMS 2023
23rd March 2023
We will be presenting and exhibiting at the 2023 TMS Annual Meeting & Exhibition in San Diego, California.
Quantification of Ultrathin Layers by AC-STEM-EDS
AC-STEM-EDS analysis is explored showing the effectiveness of this technique for characterizing ultrathin layers.
Rapid Threading Dislocation Typing in GaN Using STEM
STEM provides images of dislocations with simplified contrast, allowing rapid dislocation typing in both cross section and plan view samples.
Reverse Engineering of Compound Semiconductor Optoelectronics
When information is required from a compound seminconductor, EAG can depackage and deprocess the sample, & fully characterize it.
Silicon Wafer PV – Application Discussion
Silicon wafer solar cells and the analytical techniques used to investigate failures, bulk defects and other materials characterization.
SIMS Characterization of Atomic Layer Deposition in Electronic Applications
Atomic Layer Deposition technology aids in the demand for computational advancement in the microelectronics industry.
Statistical Analysis of Multilayer Structures in Electron Microscopy Using Image Processing
In this application note, we demonstrate our capability to generate a large number of measurements in a single image to determine the roughness of interfaces in a multilayer stack and the roughness correlation across layers.
Structural and Chemical Characterization of Li-ion Batteries
Structural and Chemical Characterization of Li-ion Batteries help to understand why batteries fail leading to safer products and improvements.
TEM Webinar
In this webinar we will introduce the principles of Transmission Electron Microscopy (TEM) with a focus on real-world problem-solving.
The Birth of PCOR-SIMS for Silicon Germanium (SiGe) Devices
PCOR-SIMS was originally developed to analyze Silicon Germanium (SiGe) devices for the communications industry.
Two-dimensional Mapping of Matrix Elements in a Microelectronic Device by STEM-EELS
Two-dimensional mapping of matrix elements in electronic devices is discussed, as provided by STEM and EELS techniques from EAG Laboratories.
Types of crystal defects that can be observed with TEM
Transmission Electron Microscopy is often used to evaluate defects in crystals, but not all defects can be observed with TEM
Understanding Energy Density in Batteries
There is still so much to learn about batteries, including challenges such as energy density, cycle life, fast charge, and safety. In this blog, we’ll be focusing on energy density.
Uniformity is Key in Epitaxial Growth
AC-STEM analysis can provide a visual representation of non-uniformities in an active region. Roughness can easily be observed within interfaces. EDS maps can then be used to corroborate the roughness in relation to composition.
Using STEM EELS to Probe Local Bonding Environment in VCSEL Oxide Apertures
Improper aperture oxidation can lead to high stress or introduce unintended defects ultimately resulting in failure. Here, we present a study using STEM EELS to provide a method for measuring differences in oxygen bonding.
Utilizing High Depth Resolution for Measuring Layers at an Atomic Level
High Depth Resolution Analysis will play a very important role in the electronic device industry as devices become smaller and smaller.
When Images Aren’t Enough – EDS and EELS
EDS and EELS can be coupled with SEM, STEM and TEM to determine the elemental composition, spatial distribution and segregation of elements.
When Temperature Matters – Cryo TEM
Cryo TEM involves performing TEM analysis while keeping the sample at cryogenic temperatures, around -170°C.