TEM, STEM and AC-STEM techniques deliver high resolution images providing a detailed view of a material or product.
A study into the structure, elemental distribution and crystal orientation of a 22nm FinFET using TEM based analysis techniques
Aberration Corrected Scanning Transmission Electron Microscopy (AC-STEM) significantly improves the resolution of the traditional STEM tools.
23rd October 2022
Industry Service Labs play a critical role in the battery community by providing fast and professional service. Learn how Eurofins EAG Laboratories can help!
In this application note, we show how different signals obtained through AC-STEM can provide direct observation of local polarity switching.
With the demand of lithium-ion batteries, it is critical to understand the structure and composition with high spatial resolution.
This paper will demonstrate how analytical tools can be used for the quality control of hydroxyapatite and β-tricalcium phosphate powders
Besides images provided by SEM and TEM, different attachments can be added to reveal crystalline information, including (SEM-EBSD) and TEM (TEM-PED).
Fine control over structural and compositional uniformity during epitaxial growth of compound semiconductors is critical for developing reliable and efficient devices.
Battery characterization improves lithium-ion battery safety and performance using techniques such as SEM, TEM, XPS, GDMS, FTIR, ICP-OES, Raman and failure analysis
9th December 2020
EAG Laboratories has completed installation of a ThermoFisher Scientific Themis Z Transmission Electron Microscope (TEM)
Examples of crystal grain orientation mapping and strain mapping in 7nm EUV technology IC chip and strained Silicon
EAG divides FA tasks into three levels. In each level, we employ optimal techniques for device characterization, defect localization, and root cause failure analysis.
PFIB differs from traditional FIB in that it uses various gases such as Xe, Ar, oxygen or nitrogen to generate a plasma that is used to remove material from a sample.
STEM provides images of dislocations with simplified contrast, allowing rapid dislocation typing in both cross section and plan view samples.
When information is required from a compound seminconductor, EAG can depackage and deprocess the sample, & fully characterize it.
Atomic Layer Deposition technology aids in the demand for computational advancement in the microelectronics industry.
In this application note, we demonstrate our capability to generate a large number of measurements in a single image to determine the roughness of interfaces in a multilayer stack and the roughness correlation across layers.
Structural and Chemical Characterization of Li-ion Batteries help to understand why batteries fail leading to safer products and improvements.
PCOR-SIMS was originally developed to analyze Silicon Germanium (SiGe) devices for the communications industry.
Two-dimensional mapping of matrix elements in electronic devices is discussed, as provided by STEM and EELS techniques from EAG Laboratories.
Transmission Electron Microscopy is often used to evaluate defects in crystals, but not all defects can be observed with TEM
Improper aperture oxidation can lead to high stress or introduce unintended defects ultimately resulting in failure. Here, we present a study using STEM EELS to provide a method for measuring differences in oxygen bonding.
High Depth Resolution Analysis will play a very important role in the electronic device industry as devices become smaller and smaller.