Li-Ion electrodes are more than just energy suppliers; they’re intricate mazes of structures and materials. Their design and intricate layout play pivotal roles in determining a battery’s capacity, discharge rate, and overall lifespan.
30keV Scanning Transmission Electron Microscopy (STEM) can provide 3Å resolution bright field (BF) and dark field (DF, ADF, HAADF) images
We provide a materials analysis study into the comparison between 22 nm node and 7 nm node FinFET technologies, using TEM-based techniques.
TEM, STEM and AC-STEM techniques deliver high resolution images providing a detailed view of a material or product.
A study into the structure, elemental distribution and crystal orientation of a 22nm FinFET using TEM based analysis techniques
Aberration Corrected Scanning Transmission Electron Microscopy (AC-STEM) significantly improves the resolution of the traditional STEM tools.
23rd October 2022
Industry Service Labs play a critical role in the battery community by providing fast and professional service. Learn how Eurofins EAG Laboratories can help!
In this webinar, we will explore the variety of microscopy techniques available at Eurofins EAG commonly utilized to characterize compound semiconductor materials.
Gallium oxide has the potential to replace or substitute gallium nitride for power conversion in electric trains and vehicles.
CIGS Thin Film PV performance reliability and uniformity as manufacturing is scaled up, can be optimized using materials characterization.
In this application note, we will focus on three applications of 4D-STEM: orientation mapping, strain analysis, and electric field imaging.
In this application note, we show how different signals obtained through AC-STEM can provide direct observation of local polarity switching.
In this application note, we show the possibility to extract distance information at an atom-column to atom-column basis with picometer level precision.
With the demand of lithium-ion batteries, it is critical to understand the structure and composition with high spatial resolution.
Advances in thin film growth has created a need for characterizing structure and chemistry at the atomic scale using EDS.
AC-STEM with Secondary Electron (SE) imaging provides the unique capability of evaluating specimen surface morphology with atomic-resolution.
In this application note, we highlight how deep learning methods for image segmentation, such as convolutional neural networks (CNNs) or vision transformers, can help interpret the complex contrast of TEM images and segment a series of thin films in 3D NAND devices.
Battery materials characterization services includes analysis of raw materials, surface chemistry, composition, morphology and uniformity
Image processing can be used to generate high density critical dimension measurements that allow us to extract the full profile of the interfacial roughness in a multilayer stack.
Biomedical Morphology and Microstructure through imaging analysis – characterizing crystallographic phase and producing elemental maps.
This paper will demonstrate how analytical tools can be used for the quality control of hydroxyapatite and β-tricalcium phosphate powders
Besides images provided by SEM and TEM, different attachments can be added to reveal crystalline information, including (SEM-EBSD) and TEM (TEM-PED).
There are many key components of the VCSEL, but one challenging region is the oxide aperture. The oxide aperture is responsible for current confinement, and it is important to have high quality oxidation to prevent failure of the device.
Investigation of the layer structure, identity and composition of an unknown coating system can be done in several ways.
July 29, 2024
Eurofins EAG Laboratories will be presenting Automated Bandgap Measurements in Optoelectronic Devices by Monochromated Electron Energy-Loss Spectroscopy at Microscopy & Microanalysis on July 29th.
In this webinar we introduce Energy Dispersive X-ray Spectroscopy (EDS) and Electron Energy Loss Spectroscopy (EELS)
Fine control over structural and compositional uniformity during epitaxial growth of compound semiconductors is critical for developing reliable and efficient devices.
Threading dislocation evaluation of dislocation type in GaN using STEM (AN463) by EAG Laboratories supports LED development and quality.
Battery characterization improves lithium-ion battery safety and performance using techniques such as SEM, TEM, XPS, GDMS, FTIR, ICP-OES, Raman and failure analysis
In Vitro Diagnostics test and system development support from the materials sciences experts at EAG Laboratories, contact us today!
9th December 2020
EAG Laboratories has completed installation of a ThermoFisher Scientific Themis Z Transmission Electron Microscope (TEM)
LED characterization, from process control to failure analysis to construction analysis, EAG Laboratories supports your LED analysis needs.
Examples of crystal grain orientation mapping and strain mapping in 7nm EUV technology IC chip and strained Silicon
EAG divides FA tasks into three levels. In each level, we employ optimal techniques for device characterization, defect localization, and root cause failure analysis.
In this webinar we introduce Precession Electron Diffraction (PED) which has been essential to nano-scale structural analysis
PFIB differs from traditional FIB in that it uses various gases such as Xe, Ar, oxygen or nitrogen to generate a plasma that is used to remove material from a sample.
15th September 2023
EAG Laboratories is pleased to announce a new addition to our wide range of Advanced Microscopy techniques. We now offer Plasma FIB (PFIB) services!
23rd March 2023
We will be presenting and exhibiting at the 2023 TMS Annual Meeting & Exhibition in San Diego, California.
AC-STEM-EDS analysis is explored showing the effectiveness of this technique for characterizing ultrathin layers.
STEM provides images of dislocations with simplified contrast, allowing rapid dislocation typing in both cross section and plan view samples.
When information is required from a compound seminconductor, EAG can depackage and deprocess the sample, & fully characterize it.
Silicon wafer solar cells and the analytical techniques used to investigate failures, bulk defects and other materials characterization.
Atomic Layer Deposition technology aids in the demand for computational advancement in the microelectronics industry.
May 6-10, 2024
Eurofins EAG Laboratories will be presenting “Thermal Oxide Characterization – Heat Treat Modality vs. Composition“ on May 10th. We hope to see you there!
In this application note, we demonstrate our capability to generate a large number of measurements in a single image to determine the roughness of interfaces in a multilayer stack and the roughness correlation across layers.
Structural and Chemical Characterization of Li-ion Batteries help to understand why batteries fail leading to safer products and improvements.
In this webinar we will introduce the principles of Transmission Electron Microscopy (TEM) with a focus on real-world problem-solving.
PCOR-SIMS was originally developed to analyze Silicon Germanium (SiGe) devices for the communications industry.
SEM equipped with EDS can capture detailed images and identify elements simultaneously on the surface of samples.
Two-dimensional mapping of matrix elements in electronic devices is discussed, as provided by STEM and EELS techniques from EAG Laboratories.
Transmission Electron Microscopy is often used to evaluate defects in crystals, but not all defects can be observed with TEM
There is still so much to learn about batteries, including challenges such as energy density, cycle life, fast charge, and safety. In this blog, we’ll be focusing on energy density.
AC-STEM analysis can provide a visual representation of non-uniformities in an active region. Roughness can easily be observed within interfaces. EDS maps can then be used to corroborate the roughness in relation to composition.
During this “Ask the Expert” webinar, we dive into the fascinating world of Atom Probe Tomography (APT). Our experts address pre-submitted questions from the audience, focusing on the chemical and structural analysis capabilities of APT.
Improper aperture oxidation can lead to high stress or introduce unintended defects ultimately resulting in failure. Here, we present a study using STEM EELS to provide a method for measuring differences in oxygen bonding.
High Depth Resolution Analysis will play a very important role in the electronic device industry as devices become smaller and smaller.
June 3-4, 2025
Join us for our Failure Analysis seminar! Enjoy networking with peers and expert technologists, share challenges in our interactive user group session, and take advantage of optional tours of nearby lab facilities.
EDS and EELS can be coupled with SEM, STEM and TEM to determine the elemental composition, spatial distribution and segregation of elements.
Cryo TEM involves performing TEM analysis while keeping the sample at cryogenic temperatures, around -170°C.
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